ao7413 20v p-channel mosfet general description product summary v ds -20v i d (at v gs =-10v) -1.4a r ds(on) (at v gs = -10v) < 113m w r ds(on) (at v gs = -4.5v) < 135m w r ds(on) (at v gs = -2.5v) < 180m w typical esd protection hbm class 2 symbol v ds the ao7413 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable fo r use as a load switch applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage -20 s g d s g d sc-70 (sot-323) top view v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl c/w c/w maximum junction-to-ambient a d 280 425 320 -13 t a =25c t a =70c pulsed drain current c continuous drain current maximum junction-to-lead junction and storage temperature range parameter typ max v units v 12 gate-source voltage drain-source voltage -20 a i d -1.4 -1.2 c/w r q ja 300 350 360 maximum junction-to-ambient a -55 to 150 c thermal characteristics power dissipation b p d t a =25c w 0.35 0.22 t a =70c rev 4: nov 2011 www.aosmd.com page 1 of 5
ao7413 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.5 -0.85 -1.2 v i d(on) -13 a 94 113 t j =125c 130 160 111 135 m w 150 180 m w g fs 5 s v sd -0.76 -1 v i s -1 a c iss 250 325 400 pf c oss 40 63 85 pf c rss 22 37 52 pf r g 11.2 17 w q g 3.2 4.5 nc q gs 0.6 nc q gd 0.9 nc t d(on) 11 ns t 5.5 ns v =-10v, v =-10v, r =7.1 w , electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions diode forward voltage forward transconductance v gs =-4.5v, v ds =-5v v gs =-10v, i d =-1.4a v gs =-4.5v, i d =-1.3a drain-source breakdown voltage on state drain current i s =-1a,v gs =0v v ds =-5v, i d =-1.4a v gs =-2.5v, i d =-1.1a i d =-250 m a, v gs =0v i dss m a v ds =v gs , i d =-250 ma v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current m w static drain-source on-resistance maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) total gate charge v gs =-4.5v, v ds =-10v, i d =-1.4a gate source charge reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time gate drain charge turn-on delaytime t r 5.5 ns t d(off) 22 ns t f 8 ns t rr 6.1 ns q rr 1.4 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =-10v, v ds =-10v, r l =7.1 w , r gen =3 w body diode reverse recovery charge i f =-1.4a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =-1.4a, di/dt=100a/ m s turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: nov 2011 www.aosmd.com page 2 of 5
ao7413 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 80 100 120 140 160 180 0 1 2 3 4 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 c 125 c v ds =-5v v gs =-2.5v v gs = - 10v v gs =-4.5v i d =-1.1a, v gs =-2.5v i d =-1.3a, v gs =-4.5v i d =-1.4a, v gs =-10v 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v - 4v - 10v -2.5v -3.5v -9v -8v -7v -6v -3v -2v -5v voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 80 120 160 200 240 280 320 360 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-1.4a 25 c 125 c rev 4: nov 2011 www.aosmd.com page 3 of 5
ao7413 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 150 300 450 600 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-1.4a 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c operating area (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =425 c/w t on t p d rev 4: nov 2011 www.aosmd.com page 4 of 5
ao7413 ao7413 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) ig v gs - + v d c isd di/dt r m v dd v dd -vds -i rev 4: nov 2011 www.aosmd.com page 5 of 5
|
